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Electron mobility
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31	TRAVELING WAVE PARAMETRIC AMPLIFIER WITH JOSEPHSON JUNCTIONS USING MINIMAL RESONATOR PHASE MATCHING (SUPPLEMENTARY INFORMATION) Coupled Mode Equations A circuit diagram of a Josephson junction embedded nonlinear transmi Add to Reading List Source URL: web.physics.ucsb.edu Language: English - Date: 2015-06-15 15:03:42 Electromagnetism Acoustics Resonator Resonance Transmission line Nonlinear optics High electron mobility transistor Coaxial cable Physics Electronics Electronic engineering
32	SECTION 1 PHYSICS OF RADIATION DAMAGES AND EFFECTS IN SOLIDS THE KINETIC COEFFICIENTS IN THE FIELD OF IR-ILLUMINATION n-Si IRRADIATED BY FAST NEUTRONS REACTOR A.P. Dolgolenko, P.G. Litovchenko Institute for nuclear resea Add to Reading List Source URL: vant.kipt.kharkov.ua Language: English - Date: 2015-04-22 09:46:54 Physical quantities Spintronics Electron mobility Semiconductors Neutron temperature Electrical resistivity and conductivity Ionizing radiation Infrared Doping Physics Condensed matter physics Materials science
33	ARTICLE Received 4 May 2012 \| Accepted 17 Dec 2012 \| Published 22 Jan 2013 DOI: ncomms2394 A high-mobility two-dimensional electron gas at Add to Reading List Source URL: qdev-data.fys.ku.dk Language: English - Date: 2014-06-03 21:19:28
34	DenV S080159_MMIC Technology.qxd Add to Reading List Source URL: www.tno.nl Language: English - Date: 2015-06-18 10:40:50 Telecommunications engineering Monolithic microwave integrated circuit Phased array High electron mobility transistor Gallium arsenide Integrated circuit Active Electronically Scanned Array X band Microwave Technology Electronics Radar
35	KAUST Repository High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices Add to Reading List Source URL: repository.kaust.edu.sa Language: English - Date: 2015-05-31 04:48:59 Zinc oxide Heterojunction Transistor Organic field-effect transistor Gallium nitride QSL 2DEG Atomic layer deposition Threshold voltage Chemistry Inorganic compounds Ultraviolet radiation
36	PH10 TECHNOLOGY The new UMS 0.1µm GaAs Very High Frequency pHEMT Process UMS is now pleased to extend its foundry offer with the opening of 0.1µm High Frequency GaAs pHEMT process. PH10 process is optimised for low noi Add to Reading List Source URL: www.ums-gaas.com Language: English - Date: 2012-07-19 03:50:56 High electron mobility transistor Gallium arsenide Chemistry Electronics Resistor
37	GaAs & GaN Build your own solution with UMS FOUNDRY Add to Reading List Source URL: www.ums-gaas.com Language: English - Date: 2013-07-19 03:07:38 Compound semiconductors Inorganic compounds Solar cells Semiconductor devices Monolithic microwave integrated circuit High electron mobility transistor Gallium arsenide MESFET Wafer Chemistry Electronics Semiconductor device fabrication
38	IEEE ELECTRON DEVICE LETTERS, VOL. EDL-6, NO. 12, DECEMBERObservation of Electron Velocity Overshoot in Sub- 100-nm-channelMOSFET’s in Silicon Add to Reading List Source URL: www.princeton.edu Language: English - Date: 2006-08-19 17:44:23 Materials science Semiconductor devices Semiconductors MOSFET Electron mobility Saturation velocity Electron Velocity overshoot Transistor Physics Condensed matter physics Charge carriers
39	✪ FURTHER READING ➔ Page 406 Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:14:36 High electron mobility transistor Indium gallium arsenide Compound semiconductors Transistor Heterojunction Gallium arsenide Indium phosphide CMOS Chemistry Electronics Optoelectronics
40	PDF Document Add to Reading List Source URL: www.barnardmicrosystems.com Language: English - Date: 2013-11-28 12:36:50 Electronic design automation Electronic circuit simulation Monolithic microwave integrated circuit SPICE High electron mobility transistor Gallium arsenide Logic simulation Quite Universal Circuit Simulator Electronic engineering Electronics Digital electronics

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